Description
General part information
IPB095N20NM6ATMA1
IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB095N20NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 13 A |
| Current - Continuous Drain (Id) (Tc) | 116 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On) | 10 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 66 nC, 66 nC |
| Input Capacitance (Ciss) (Max) | 5500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3-U01 |
| Power Dissipation (Max) | 300 W, 3.8 W |
| Rds On (Max) | 8.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources