Specification	SI5424DC-T1-GE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	2.5 W, 6.25 W
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Technical documentation and resources