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XP3N028EN

XP3N028EN

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YAGEO

MOSFET N-CH 30V 5.4A SOT23

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XP3N028EN

XP3N028EN

Active
YAGEO

MOSFET N-CH 30V 5.4A SOT23

Find alt

Description

General part information

XP3N028EN

MOSFET N-CH 30V 5.4A SOT23

Technical Specifications

Parameters and characteristics for this part

SpecificationXP3N028EN
Current - Continuous Drain (Id) (Ta)5.4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)11.5 nC
Input Capacitance (Ciss) (Max)1330 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23
Power Dissipation (Max)1.25 W
Rds On (Max)28 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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