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SQJQ510ER-T1_GE3

SQJQ510ER-T1_GE3

Active
Vishay Dale

N-CHANNEL 100-V (D-S) 175C MOSFE

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SQJQ510ER-T1_GE3

SQJQ510ER-T1_GE3

Active
Vishay Dale

N-CHANNEL 100-V (D-S) 175C MOSFE

Find alt

Description

General part information

SQJQ510ER-T1_GE3

N-CHANNEL 100-V (D-S) 175C MOSFE

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJQ510ER-T1_GE3
Current - Continuous Drain (Id) (Tc)225 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)132 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)10887 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseGull Wing, 8-PowerSMD
Package Length8 mm
Package NamePowerPAK®
Package Width8 mm
Power Dissipation (Max)214 W
QualificationAEC-Q101
Rds On (Max)1.86 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.3 V

Pricing

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CAD

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Documents

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