JANSH2N7669UFBC
ActiveEPC Space, LLC
QPL GAN FET HEMT 200V 18A FSMD-B
JANSH2N7669UFBC
ActiveEPC Space, LLC
QPL GAN FET HEMT 200V 18A FSMD-B
Description
General part information
JANSH2N7669UFBC
QPL GAN FET HEMT 200V 18A FSMD-B
Technical Specifications
Parameters and characteristics for this part
| Specification | JANSH2N7669UFBC |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 18 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7 nC |
| Grade | Military |
| Input Capacitance (Ciss) (Max) | 900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 4-SMD, No Lead |
| Package Name | 4-SMD |
| Qualification | MIL-PRF-19500 |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Positive | 6 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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