Specification	PJW4P06A-AU_R2_007A1

Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	785 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SOT-223
Power Dissipation (Max)	3.1 W
Rds On (Max)	110 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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