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MURT20020R

MURT20020R

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DACO Semiconductor

DIODE MODULE GEN PURP 200V 100A

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MURT20020R

MURT20020R

Active
DACO Semiconductor

DIODE MODULE GEN PURP 200V 100A

Find alt

Description

General part information

MURT20020R

DIODE MODULE GEN PURP 200V 100A

Technical Specifications

Parameters and characteristics for this part

SpecificationMURT20020R
Current - Average Rectified (Io) (per Diode)100 A
Current - Reverse Leakage25 µA
Diode ConfigurationCommon Anode
Diode Pair Count1 pair
Mounting TypeChassis Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-244AB Isolated Tab, Module
Package NameThree Tower
Reverse Recovery Time (trr)75 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max)1 V, 1 V

Pricing

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CAD

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Documents

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