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FQB2N90TM

FQB2N90TM

Obsolete
ON Semiconductor

MOSFET N-CH 900V 2.2A D2PAK

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FQB2N90TM

FQB2N90TM

Obsolete
ON Semiconductor

MOSFET N-CH 900V 2.2A D2PAK

Find alt

Description

General part information

FQB2N90TM

MOSFET N-CH 900V 2.2A D2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFQB2N90TM
Current - Continuous Drain (Id) (Tc)2.2 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)15 nC
Input Capacitance (Ciss) (Max)500 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)85 W, 3.13 W
Rds On (Max)7.2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

Pricing

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CAD

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Documents

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