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XP10N024H

XP10N024H

Active
YAGEO

MOSFET N CH 100V 25.8A TO-252

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XP10N024H

XP10N024H

Active
YAGEO

MOSFET N CH 100V 25.8A TO-252

Find alt

Description

General part information

XP10N024H

MOSFET N CH 100V 25.8A TO-252

Technical Specifications

Parameters and characteristics for this part

SpecificationXP10N024H
Current - Continuous Drain (Id) (Ta)25.8 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)23.2 nC
Input Capacitance (Ciss) (Max)2160 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)31.2 W, 2 W
Rds On (Max)24 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

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CAD

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