
HGTG27N60C3DR
ActiveON Semiconductor
IGBT 600V 54A TO-247

HGTG27N60C3DR
ActiveON Semiconductor
IGBT 600V 54A TO-247
Description
General part information
HGTG27N60C3DR
IGBT 600V 54A TO-247
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTG27N60C3DR |
|---|---|
| Current - Collector (Ic) (Max) | 54 A |
| Current - Collector Pulsed (Icm) | 108 A |
| Gate Charge | 212 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power - Max | 208 W |
| Vce(on) (Max) | 2.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available