Specification	NTD4809NA-1G

Current - Continuous Drain (Id) (Ta)	9.6 A
Current - Continuous Drain (Id) (Tc)	58 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	11.5 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	1456 pF, 1456 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	IPAK
Power Dissipation (Max)	1.3 W, 52 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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