Specification	SISS5208DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	50 A
Current - Continuous Drain (Id) (Tc)	172 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	4100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8S
Package Name	PowerPAK® 1212-8S
Power Dissipation (Max)	4.8 W, 56.8 W
Rds On (Max)	1.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-7 V
Vgs (Max) Positive	8 V
Vgs(th) (Max)	1.3 V

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