Description
General part information
2EDL5023U2DXTMA1
Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2EDL5023U2DXTMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 5 A |
| Current - Peak Output (Source) | 3 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 3.5 ns |
| Gate Channel | N-Channel |
| Gate Type | MOSFET, GaN FET |
| High Side Voltage - Max (Bootstrap) | 120 V |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 12-UFQFN |
| Package Name | PG-TSNP-12-5 |
| Rise Time (Typ) | 4.4 ns |
| Voltage - Supply (Maximum) | 5.5 V |
| Voltage - Supply (Minimum) | 4.5 V |
Pricing
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CAD
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