2N5796U
ActiveTT Electronics/BI
BIPOLAR TRANSISTORS - BJT DUAL PNP TRANSISTOR 6 PIN
2N5796U
ActiveTT Electronics/BI
BIPOLAR TRANSISTORS - BJT DUAL PNP TRANSISTOR 6 PIN
Description
General part information
2N5796U
BIPOLAR TRANSISTORS - BJT DUAL PNP TRANSISTOR 6 PIN
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5796U |
|---|---|
| Current - Collector (Ic) (Max) | 0.6 mA |
| Current - Collector Cutoff (Max) | 0.01 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | 6-CLCC |
| Package Name | 6-CLCC |
| PNP Count | 2 |
| Power - Max | 0.6 W |
| Transistor Configuration | Dual |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Quality Manual for Juarez Site
Sensors Product Selection Guide
Optoelectronics One Pager
RoHs Letter for Juarez Site
Juarez ISO 9001
Conflict Minerals Policy for Juarez Site
Optoelectronics for Medical Tri-Fold
Lead Free and RoHs Compliance for Juarez Site
Custom Optoelectronic Assemblies Tri-Fold
REACH Compliance for Juarez Site
2N5796U
RoHs 3 Declaration Form for Juarez Site
Supplier Quality Requirements Manual
Declaration of Mineral Conflict Free Material for Juarez Site
High-Reliability Optoelectronics Brochure
Optoelectronics for CubeSat Technologies