Specification	SIJ4409DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	15.5 A
Current - Continuous Drain (Id) (Tc)	43.6 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	126 nC
Input Capacitance (Ciss) (Max)	5670 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	2.6 W, 32.8 W
Rds On (Max)	9.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

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