Description
General part information
IMLT65R040M2HXTMA1
The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMLT65R040M2HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 57 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 28 nC |
| Input Capacitance (Ciss) (Max) | 997 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 16-PowerSOP Module |
| Package Name | PG-HDSOP-16-6 |
| Power Dissipation (Max) | 268 W |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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