Specification	RQ3E180BNTB

Current - Continuous Drain (Id) (Tc)	39 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	37 nC
Input Capacitance (Ciss) (Max)	3500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Length	3.2 mm
Package Name	8-HSMT
Package Width	3 mm
Power Dissipation (Max)	20 W, 2 W
Rds On (Max)	3.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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