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Description

General part information

RSD080N06TL

MOSFET N-CH 60V 8A CPT3

Technical Specifications

Parameters and characteristics for this part

SpecificationRSD080N06TL
Current - Continuous Drain (Id) (Ta)8 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)9.4 nC
Input Capacitance (Ciss) (Max)380 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameCPT3
Power Dissipation (Max)15 W
Rds On (Max)80 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

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CAD

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