Description
General part information
IAUCN08S7N019ATMA1
Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUCN08S7N019ATMA1 |
|---|---|
| Current - Continuous Drain (Id) | 175 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 19 nC |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-43 |
| Qualification | AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources