Specification	SI2301CDS-T1-BE3

Current - Continuous Drain (Id) (Ta)	2.3 A
Current - Continuous Drain (Id) (Tc)	3.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	405 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	860 mW, 1.6 W
Rds On (Max)	112 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

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