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W979H6KBVX1I TR

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Winbond Electronics

IC DRAM 512MBIT HSUL 12 134VFBGA

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W979H6KBVX1I TR

Active
Winbond Electronics

IC DRAM 512MBIT HSUL 12 134VFBGA

Find alt

Description

General part information

W979H6KBVX1I TR

IC DRAM 512MBIT HSUL 12 134VFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationW979H6KBVX1I TR
Clock Frequency533 MHz
Memory Depth32 M
Memory FormatDRAM
Memory Interface (Type)HSUL_12
Memory Size512 Mb
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case134-VFBGA
Package Length10 mm
Package Name134-VFBGA
Package Width11.5 mm
TechnologySDRAM - Mobile LPDDR2-S4B
Voltage - Supply (Range 1 Maximum)1.3 V
Voltage - Supply (Range 1 Minimum)1.14 V
Voltage - Supply (Range 2 Maximum)1.95 V
Voltage - Supply (Range 2 Minimum)1.7 V
Write Cycle Time - Page15 ns
Write Cycle Time - Word15 ns

Pricing

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CAD

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Documents

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