Description
General part information
IPG20N10S4L22ATMA1
MOSFET, N-CH, 100V, 20A, TDSON ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | IPG20N10S4L22ATMA1 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 20 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 27 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1755 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PG-TDSON-8-4 |
| Power - Max | 60 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 22 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
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