Specification	SIZF906BDT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	36 A
Current - Continuous Drain (Id) (Ta) (2)	63 A
Current - Continuous Drain (Id) (Tc)	105 A
Current - Continuous Drain (Id) (Tc) (2)	257 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	49 nC, 165 nC
Input Capacitance (Ciss) (Max)	5550 pF, 1630 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	6 mm
Package Name	8-PowerPair®
Package Width	5 mm
Power - Max (Ta)	4.5 W, 5 W
Power - Max (Tc)	38 W, 83 W
Rds On (Max)	2.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V

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