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IAUZN04S7L025ATMA1

IAUZN04S7L025ATMA1

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INFINEON

MOSFET_(20V 40V)

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IAUZN04S7L025ATMA1

IAUZN04S7L025ATMA1

Active
INFINEON

MOSFET_(20V 40V)

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Description

General part information

IAUZN04S7L025ATMA1

MOSFET_(20V 40V)

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUZN04S7L025ATMA1
Current - Continuous Drain (Id) (Tj)117 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)30 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1954 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSDSON-8-44
Power Dissipation (Max)65 W
QualificationAEC-Q101
Rds On (Max)2.56 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)1.8 V

Pricing

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CAD

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Documents

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