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HIP6602ACR

HIP6602ACR

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ON Semiconductor

HALF BRIDGE BASED MOSFET DRIVER

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HIP6602ACR

HIP6602ACR

Active
ON Semiconductor

HALF BRIDGE BASED MOSFET DRIVER

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Description

General part information

HIP6602ACR

HALF BRIDGE BASED MOSFET DRIVER

Technical Specifications

Parameters and characteristics for this part

SpecificationHIP6602ACR
Channel TypeSynchronous
Current - Peak Output (Source)0.73 A
Driven ConfigurationFull-Bridge
Fall Time (Typ)20 ns
Gate ChannelN-Channel
Gate TypeMOSFET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers4
Operating Temperature (Max)85 °C
Operating Temperature (Min)0 °C
Package / Case16-VQFN Exposed Pad
Package Length5 mm
Package Name16-QFN
Package Width5 mm
Rise Time (Typ)20 ns
Voltage - Supply (Maximum)13.2 V
Voltage - Supply (Minimum)1.8 V

Pricing

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