
UF4C120070B7SSB
ActiveON Semiconductor
1200V/70MO,SICFET,G4,TO263-7

UF4C120070B7SSB
ActiveON Semiconductor
1200V/70MO,SICFET,G4,TO263-7
Description
General part information
UF4C120070B7SSB
1200V/70MO,SICFET,G4,TO263-7
Technical Specifications
Parameters and characteristics for this part
| Specification | UF4C120070B7SSB |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 25.7 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 37.8 nC |
| Input Capacitance (Ciss) (Max) | 1370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, D2PAK-7L |
| Power Dissipation (Max) | 183 W |
| Rds On (Max) | 91 mOhm |
| Technology | SiCFET (Cascode SiCJFET) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 6 V |
Pricing
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CAD
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Documents
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