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UF4C120070B7SSB

UF4C120070B7SSB

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ON Semiconductor

1200V/70MO,SICFET,G4,TO263-7

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UF4C120070B7SSB

UF4C120070B7SSB

Active
ON Semiconductor

1200V/70MO,SICFET,G4,TO263-7

Find alt

Description

General part information

UF4C120070B7SSB

1200V/70MO,SICFET,G4,TO263-7

Technical Specifications

Parameters and characteristics for this part

SpecificationUF4C120070B7SSB
Current - Continuous Drain (Id) (Tj)25.7 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)12 V
FET TypeN-Channel
Gate Charge (Max)37.8 nC
Input Capacitance (Ciss) (Max)1370 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameD2PAK, D2PAK-7L
Power Dissipation (Max)183 W
Rds On (Max)91 mOhm
TechnologySiCFET (Cascode SiCJFET)
Vgs (Max)20 V
Vgs(th) (Max)6 V

Pricing

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CAD

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Documents

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