
FDMS86150
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V, 80A, 4.85MΩ

FDMS86150
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V, 80A, 4.85MΩ
Description
General part information
FDMS86150
Shielded Gate MOSFET Technology
Max rDS(on) = 4.85 mO at VGS = 10 V, ID = 16 A
Max rDS(on) = 7.8 mO at VGS = 6 V, ID = 13 A
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS86150 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 16 A |
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 62 nC |
| Input Capacitance (Ciss) (Max) | 4065 pF, 4065 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 5 mm |
| Package Name | 8-PQFN |
| Package Width | 6 mm |
| Power Dissipation (Max) | 156 W, 2.7 W |
| Rds On (Max) | 4.85 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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