Zenode.ai Logo
Trans MOSFET N-CH 100V 4.8A 8-Pin Power 56 T/R

FDMS86150

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V, 80A, 4.85MΩ

Find alt
Trans MOSFET N-CH 100V 4.8A 8-Pin Power 56 T/R

FDMS86150

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V, 80A, 4.85MΩ

Find alt

Description

General part information

FDMS86150

Shielded Gate MOSFET Technology

Max rDS(on) = 4.85 mO at VGS = 10 V, ID = 16 A

Max rDS(on) = 7.8 mO at VGS = 6 V, ID = 13 A

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS86150
Current - Continuous Drain (Id) (Ta)16 A
Current - Continuous Drain (Id) (Tc)60 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)62 nC
Input Capacitance (Ciss) (Max)4065 pF, 4065 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-PQFN
Package Width6 mm
Power Dissipation (Max)156 W, 2.7 W
Rds On (Max)4.85 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part