SIHH11N60E-T1-GE3
ActiveVishay Dale
MOSFET N-CH 600V 11A PPAK 8 X 8
SIHH11N60E-T1-GE3
ActiveVishay Dale
MOSFET N-CH 600V 11A PPAK 8 X 8
Description
General part information
SIHH11N60E-T1-GE3
MOSFET N-CH 600V 11A PPAK 8 X 8
Technical Specifications
Parameters and characteristics for this part
| Specification | SIHH11N60E-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 11 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 62 nC |
| Input Capacitance (Ciss) (Max) | 1076 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 8 mm |
| Package Name | PowerPAK® |
| Package Width | 8 mm |
| Power Dissipation (Max) | 114 W |
| Rds On (Max) | 339 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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