Zenode.ai Logo
BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1

Active
INFINEON

OPTIMOS™ P-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 12 MOHM;

Find alt
BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1

Active
INFINEON

OPTIMOS™ P-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 12 MOHM;

Find alt

Description

General part information

BSZ120P03NS3GATMA1

These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ120P03NS3GATMA1
Current - Continuous Drain (Id) (Ta)11 A, 11 A
Current - Continuous Drain (Id) (Tc)40 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)45 nC
Input Capacitance (Ciss) (Max)3360 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSDSON-8
Power Dissipation (Max)52 W, 2.1 W
Rds On (Max)12 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)3.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources