Description
General part information
GCMX040A120B2B1P
1200V, 40M SIC MOSFET HALF BRIDG
Technical Specifications
Parameters and characteristics for this part
| Specification | GCMX040A120B2B1P |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) (Tc) | 56 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Max) | 120 nC |
| Input Capacitance (Ciss) (Max) | 3200 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Power - Max (Tc) | 217 W |
| Rds On (Max) | 52 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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