IRFHM830TRPBF
ActiveSTRONGIRFET™ N-CHANNEL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 3.8 MOHM;
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IRFHM830TRPBF
ActiveSTRONGIRFET™ N-CHANNEL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 3.8 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFHM830TRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40 A, 21 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 2.7 W, 37 W |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm |
| Supplier Device Package | 8-PQFN-Dual |
| Supplier Device Package [x] | 3.3 |
| Supplier Device Package [y] | 3.3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFHM830 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources