Specification	NTHD3100CT3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	3.2 A
Current - Continuous Drain (Id) (Typical)	2.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	2.3 nC
Input Capacitance (Ciss) (Max)	165 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	ChipFET™
Power - Max	1.1 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.2 V

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