Specification	IMZA120R012M2HXKSA1

Current - Continuous Drain (Id) (Tc)	129 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	124 nC
Input Capacitance (Ciss) (Max)	4050 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	PG-TO247-4-8
Power Dissipation (Max)	480 W
Rds On (Max)	16 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-7 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5.1 V

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