Description
General part information
BSC005N03LS5IATMA1
With this OptiMOSTM5 power MOSFET 30V, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. The BSC005N03LS5I in SuperSO8 package offers BiC RDS(on)of 0.55mOhm.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC005N03LS5IATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 42 A |
| Current - Continuous Drain (Id) (Tc) | 433 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 128 nC |
| Input Capacitance (Ciss) (Max) | 8000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 FL |
| Power Dissipation (Max) | 188 W, 3 W |
| Rds On (Max) | 0.55 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part