Description
General part information
IRF6614
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF6614 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12.7 A |
| Current - Continuous Drain (Id) (Tc) | 55 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 29 nC |
| Input Capacitance (Ciss) (Max) | 2560 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | DirectFET™ Isometric ST |
| Package Name | DIRECTFET™ ST |
| Power Dissipation (Max) | 2.1 W, 42 W |
| Rds On (Max) | 8.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.25 V |
Pricing
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CAD
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