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IXFN30N120SK

IXFN30N120SK

Obsolete
LITTELFUSE

SIC AND MULTICHIP DISCRETE

Find alt
IXFN30N120SK

IXFN30N120SK

Obsolete
LITTELFUSE

SIC AND MULTICHIP DISCRETE

Find alt

Description

General part information

IXFN30N120SK

SIC AND MULTICHIP DISCRETE

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFN30N120SK
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)310 nC
Input Capacitance (Ciss) (Max)19000 pF
Mounting TypeChassis Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-227-4, miniBLOC
Package NameSOT-227B
Power Dissipation (Max)890 W
Rds On (Max)350 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)6.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

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