SF1006G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A TO220AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SF1006G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Speed	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation SF1006G	400 V	35 ns	TO-220AB	50 pF	10 µA	Standard	200 mA 500 ns	TO-220-3	Through Hole	1.3 V	10 A	150 °C	-55 °C

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General part information

Diode 400 V 10A Through Hole TO-220AB

Technical documentation and resources