JANS1N5416US
ActiveMicrochip Technology
DIODE GEN PURP 100V 3A B SQ-MELF
JANS1N5416US
ActiveMicrochip Technology
DIODE GEN PURP 100V 3A B SQ-MELF
Description
General part information
JANS1N5416US
Diode 100 V 3A Surface Mount B, SQ-MELF
Technical Specifications
Parameters and characteristics for this part
| Specification | JANS1N5416US |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Grade | Military |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | SQ-MELF, B |
| Package Name | SQ-MELF, B |
| Qualification | 411, MIL-PRF-19500 |
| Reverse Recovery Time (trr) | 150 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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