1PS193,115

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NXP USA Inc.

DIODE GP 80V 215MA SMT3 MPAK

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Active

NXP USA Inc.

DIODE GP 80V 215MA SMT3 MPAK

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1PS193,115	1PS19 Series

Capacitance @ Vr, F	1.5 pF	1.5 pF
Current - Average Rectified (Io)	215 mA	215 mA
Current - Reverse Leakage @ Vr	500 nA	500 nA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction	150 °C	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns	4 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	MPAK, SMT3	MPAK, SMT3
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V	80 V

DIODE GP 80V 215MA SMT3 MPAK

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)	Speed	Capacitance @ Vr, F	Mounting Type	Technology	Operating Temperature - Junction
NXP USA Inc. 1PS193,115	80 V	215 mA	MPAK, SMT3	500 nA	SC-59, SOT-23-3, TO-236-3	4 ns	200 mA, 500 ns	1.5 pF	Surface Mount	Standard	150 °C
NXP USA Inc. 1PS193,135	80 V	215 mA	MPAK, SMT3	500 nA	SC-59, SOT-23-3, TO-236-3	4 ns	200 mA, 500 ns	1.5 pF	Surface Mount	Standard	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 215mA Surface Mount SMT3; MPAK

Technical documentation and resources