2SK3483-AZ

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Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

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Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3483-AZ

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	1 W, 40 W
Rds On (Max) @ Id, Vgs	52 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Power MOSFETs for Automotive

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)
Renesas Electronics Corporation 2SK3483-AZ	28 A	N-Channel	52 mOhm	20 V	100 V	Through Hole	10 V, 49 nC	1 W, 40 W	IPAK, TO-251-3 Short Leads, TO-251AA	150 °C	2300 pF	MOSFET (Metal Oxide)	4.5 V, 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Nch Single Power MOSFET 100V 28A 52mohm MP-3/TO-251 Automotive

Technical documentation and resources