X0203NN 5AA4

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STMicroelectronics

SCR 800V 1.25A SOT223

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STMicroelectronics

SCR 800V 1.25A SOT223

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	X0203NN 5AA4	X0203 Series

	-	-
Current - Gate Trigger (Igt) (Max) [Max]	200 µA	200 µA
Current - Hold (Ih) (Max) [Max]	5 mA	5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm)	22.5 A, 25 A	22.5 - 25 A
Current - Off State (Max) [Max]	5 µA	5 µA
Current - On State (It (AV)) (Max) [Max]	800 mA	800 mA
Current - On State (It (RMS)) (Max)	1.25 A	1.25 A
Mounting Type	Surface Mount	Through Hole, Surface Mount
Operating Temperature [Max]	125 °C	125 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	TO-261AA, TO-261-4	TO-226-3, TO-92-3, TO-261AA, TO-261-4
SCR Type	Sensitive Gate	Sensitive Gate
Supplier Device Package	SOT-223	TO-92-3, SOT-223
Voltage - Gate Trigger (Vgt) (Max) [Max]	800 mV	800 mV
Voltage - Off State	800 V	800 V
Voltage - On State (Vtm) (Max)	1.45 V	1.45 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

1.25 A Logic Level SCR thyristor

Part	Current - Off State (Max) [Max]	Supplier Device Package	Package / Case	Current - Gate Trigger (Igt) (Max) [Max]	Current - Non Rep. Surge 50, 60Hz (Itsm)	Current - On State (It (RMS)) (Max)	Voltage - On State (Vtm) (Max)	Current - On State (It (AV)) (Max) [Max]	Voltage - Off State	SCR Type	Mounting Type	Current - Hold (Ih) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Gate Trigger (Vgt) (Max) [Max]
STMicroelectronics X0203NA 1BA2
STMicroelectronics X0203NA 1BA2	5 µA	TO-92-3	TO-226-3, TO-92-3	200 µA	22.5 A, 25 A	1.25 A	1.45 V	800 mA	800 V	Sensitive Gate	Through Hole	5 mA	125 °C	-40 °C	800 mV
STMicroelectronics X0203NN 5AA4	5 µA	SOT-223	TO-261-4, TO-261AA	200 µA	22.5 A, 25 A	1.25 A	1.45 V	800 mA	800 V	Sensitive Gate	Surface Mount	5 mA	125 °C	-40 °C	800 mV

General part information

The X02 SCR can be used as the on/off function in applications where topology does not offer high current for gate triggering.

This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments.

Technical documentation and resources

No documents available