SK12H60

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 12A DO201AD

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 12A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SK12H60

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	120 µA
Mounting Type	Through Hole
Operating Temperature - Junction	200 °C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Qualification	Grade
Taiwan Semiconductor Corporation SK12H60	DO-201AD Axial	Through Hole	120 µA	12 A	200 °C	200 mA 500 ns	700 mV	Schottky	60 V	DO-201AD
Taiwan Semiconductor Corporation SK12H45 A0G	DO-201AD Axial	Through Hole	120 µA	12 A	200 °C	200 mA 500 ns		Schottky	45 V	DO-201AD	550 mV
Taiwan Semiconductor Corporation SK12H45	DO-201AD Axial	Through Hole	120 µA	12 A	200 °C	200 mA 500 ns		Schottky	45 V	DO-201AD	550 mV
Taiwan Semiconductor Corporation SK12H60 B0G	DO-201AD Axial	Through Hole	120 µA	12 A	200 °C	200 mA 500 ns	700 mV	Schottky	60 V	DO-201AD
Taiwan Semiconductor Corporation SK12BHR5G	DO-214AA SMB	Surface Mount	500 µA	1 A		200 mA 500 ns	500 mV	Schottky	20 V	DO-214AA		-55 °C	125 °C	SMB	AEC-Q101	Automotive

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General part information

Diode 60 V 12A Through Hole DO-201AD

Technical documentation and resources