Specification	BSZ105N04NSGATMA1

Current - Continuous Drain (Id) (Ta)	11 A, 11 A
Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	17 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PG-TSDSON-8
Power Dissipation (Max)	2.1 W, 35 W
Rds On (Max)	10.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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