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TTA1943(Q)

TTA1943(Q)

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Toshiba Semiconductor and Storage

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE

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TTA1943(Q)

TTA1943(Q)

Active
Toshiba Semiconductor and Storage

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE

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Description

General part information

TTA1943(Q)

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

SpecificationTTA1943(Q)
Current - Collector (Ic) (Max)15 A
Current - Collector Cutoff (Max)5 µA
DC Current Gain (hFE) (Min)80
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-3PL
Package NameTO-3P(L)
Power - Max150 W
Supplier Device PackageTO-3P, L
Transistor TypePNP
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)230 V

Pricing

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CAD

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