XP3N1R0MT

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YAGEO XSEMI

FET N-CH 30V 54.2A 245A PMPAK

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YAGEO XSEMI

FET N-CH 30V 54.2A 245A PMPAK

Technical Specifications

Parameters and characteristics for this part

Specification	XP3N1R0MT

Current - Continuous Drain (Id) @ 25°C	245 A, 54.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	120 nC
Input Capacitance (Ciss) (Max) @ Vds	12320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Rds On (Max) @ Id, Vgs	1.05 mOhm
Supplier Device Package	PMPAK® 5 x 6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

FET N-CH 30V 54.2A 245A PMPAK

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	FET Type	Vgs (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
YAGEO XSEMI XP3N1R0MT	54.2 A, 245 A	Surface Mount	4.5 V, 10 V	1.05 mOhm	30 V	8-PowerLDFN	120 nC	2.2 V	N-Channel	20 V	MOSFET (Metal Oxide)	PMPAK® 5 x 6	12320 pF	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 54.2A (Ta), 245A (Tc) 5W (Ta), 104W (Tc) Surface Mount PMPAK® 5 x 6

Technical documentation and resources