
BSDD08G65E2
ActiveBourns Inc.
DIODE SIL CARBIDE 650V 8A TO252

BSDD08G65E2
ActiveBourns Inc.
DIODE SIL CARBIDE 650V 8A TO252
Description
General part information
BSDD08G65E2
DIODE SIL CARBIDE 650V 8A TO252
Technical Specifications
Parameters and characteristics for this part
| Specification | BSDD08G65E2 |
|---|---|
| Capacitance | 267 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage | 40 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 (DPAK) |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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CAD
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Documents
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