MUR30060CT
ActiveGeneSiC Semiconductor
DIODE MODULE GP 600V 150A 2TOWER
MUR30060CT
ActiveGeneSiC Semiconductor
DIODE MODULE GP 600V 150A 2TOWER
Description
General part information
MUR30060CT
DIODE MODULE GP 600V 150A 2TOWER
Technical Specifications
Parameters and characteristics for this part
| Specification | MUR30060CT |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 150 A |
| Current - Reverse Leakage | 25 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | Twin Tower |
| Package Name | Twin Tower |
| Reverse Recovery Time (trr) | 90 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 1.7 V, 1.7 V |
Pricing
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CAD
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Documents
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