Description
General part information
IMBG65R048M1HXTMA1
CoolSiC™ MOSFET technologyleverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R048M1HCoolSiC™ MOSFET 650Vis a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in high power applications. It is optimized to enable max system performance, compactness and reliability.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMBG65R048M1HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 45 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 33 nC |
| Input Capacitance (Ciss) (Max) | 1118 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | PG-TO263-7-12, D2PAK |
| Power Dissipation (Max) | 183 W |
| Rds On (Max) | 64 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.7 V |
Pricing
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