1N1184

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GeneSiC Semiconductor

DIODE GEN PURP 100V 35A DO5

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GeneSiC Semiconductor

DIODE GEN PURP 100V 35A DO5

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N1184	1N1184 Series

Current - Average Rectified (Io)	35 A	35 - 40 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Chassis, Stud Mount	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C	190 - 200 °C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	DO-203AB, DO-5, Stud	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	DO-5	DO-5
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V	100 V
Voltage - Forward (Vf) (Max) @ If	-	1.1 V

DIODE GEN PURP 100V 35A DO5

Part	Speed	Speed	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor 1N1184	Standard Recovery >500ns	200 mA	DO-203AB, DO-5, Stud	Chassis, Stud Mount	190 °C	-65 C	35 A	100 V	10 µA	DO-5	Standard
GeneSiC Semiconductor 1N1184A	Standard Recovery >500ns	200 mA	DO-203AB, DO-5, Stud	Chassis, Stud Mount	200 C	-65 C	40 A	100 V	10 µA	DO-5	Standard	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 35A Chassis, Stud Mount DO-5

Technical documentation and resources