Zenode.ai Logo

Description

General part information

MCGWF20P06YHE3-TP

POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationMCGWF20P06YHE3-TP
Current - Continuous Drain (Id) (Tc)20 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)25 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1483 pF, 1483 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerWDFN
Package NameDFN3333-8
Power Dissipation (Max)39 W
QualificationAEC-Q101
Rds On (Max)26 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources